[12a-D221-1~9] 9.4 Thermoelectric conversion

[12a-D221-5] [The 4th Thin Film and Surface Physics Division Award Speech] Methodology of thermoelectric power factor enhancement by controlling nanowire interface

〇Takafumi Ishibe¹, Atsuki Tomeda¹, Kentaro Watanabe², Yoshinari Kamakura³, Nobuya Mori⁴, Nobuyasu Naruse⁵, Yutaka Mera⁵, Yuichiro Yamashita⁶, Yoshiaki Nakamura¹ (1.Eng. Sci. Osaka Univ., 2.Tohoku Univ., 3.Osaka Institute of Technology, 4.Eng. Osaka Univ., 5.Shiga Univ. Medical Science, 6.AIST)

Keywords:Thermoelectric material, ZnO, Electron transport

For developing high-performance thermoelectric materials, high thermoelectric power factor and low thermal conductivity are strongly required. However, their simultaneous realization has long been a critical issue because of the intercorrelated relationship among the thermoelectric physical parameters. We have paid attention to cost-effective and non-toxic ZnO with relatively higher thermoelectric power factor among other oxide materials. Recently, we achieved the simultaneous realization of thermoelectric power factor enhancement and thermal conductivity reduction by introducing nanowire interface into ZnO film. In this study, we establish the methodology of thermoelectric power factor enhancement by precisely analyzing electron transport in this material system.