[12a-D419-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

△ [12a-D419-12] Low temperature formation of indium oxide thin film using solution process with aqueous precursor solution and excimer light assisted annealing

〇(M1)Keisuke Takano¹, Kazuyori Oura¹, Masatoshi Koyama¹, Toshihiko Maemoto¹, Shigehiko Sasa¹, Noritaka Takezoe², Akihiro Shimizu², Hiroyasu Ito² (1.Osaka Inst. of Tech., 2.Ushio Inc.)

Keywords:indium oxide, excimer light, solution method

We have prepared a carbon-free aqueous precursor solution using indium nitrate, and are working to lower the process temperature of indium oxide (In2O3) TFTs. We focused on light-assisted annealing using short-wavelength excimer light, and by irradiating the thin film containing only indium nitrate and water with excimer light, the same effect as a heat treatment at about 200℃ was achieved. I found something from infrared spectroscopy (FT-IR) and report on those results.