[12a-D419-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

△ [12a-D419-8] Thin film transistor using hydrogen-doped a-Ga-O

〇Akihiro Kato¹, Yurika Kasai¹, Keisuke Ide¹, Takayoshi Katase¹, Hidenori Hiramatsu^1,2, Hideo Hosono^1,2, Toshio Kamiya^1,2 (1.MSL, Tokyo Tech, 2.MCES, Tokyo Tech.)

Keywords:Amorphous oxide semiconductor, Field effect transistor, Hydrogen doping