[12a-D511-1~10] 13.6 ナノ構造・量子現象・ナノ量子デバイス

▲ [12a-D511-3] Observation of optical anisotropy of GaAsSb-capped InAs quantum dots

〇Kehan Zhou¹、Yuichi Nakamura¹、Lian Ji²、Shulong Lu²、Atsushi Tackeuchi¹ (1.Waseda Univ.、2.SINANO-CAS)

キーワード：quantum dots, GaAsSb InAs, degree of linear polarization

In this research, we investigated the degree of linear polarization of GaAsSb-capped InAs quantum dots by photoluminescence measurement. As a result, the DLP of 15%-Sb sample is 3.4% and the DLP of 25%-Sb sample is 11.7% at 13 K. This result shows that the DLP beacomes larger for the higher Sb content. I think it is important for understanding the optical property of GaAsSb-capped InAs quantum dots and its future application.