[12a-D511-1~10] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[12a-D511-4] Excitation power dependence of spin relaxation time in GaAs/AlGaAs/AlAs type-II tunneling bi-quantum wells

〇Yuichi Nakamura¹, Yuki Matsuda¹, Hiroki Fujinuma¹, Qiming Sun¹, Sakuya Kaneko¹, Ko Nakayama¹, Atsushi Tackeuchi¹ (1.Waseda Univ.)

Keywords:spin relaxation, bi-quantum well, tunneling

In this research, we investigated the spin spin relaxation in type-II GaAs/AlGaAs/AlAs tunneling bi-quantum wells by time-resolved spin-dependent pump and probe reflection measurements. As a result, the spin relaxation time in 4.0-nm-thick barriers sample was 87 ps at 50 K, 30 mW. The negative excitation power dependence of the spin relaxation time was observed only in sample with thicker barriers. In my opinion, this research has the important meaning that can contribute to the elucidation of the spin relaxation mechanism.