[12a-D511-1~10] 13.6 ナノ構造・量子現象・ナノ量子デバイス

[12a-D511-4] Excitation power dependence of spin relaxation time in GaAs/AlGaAs/AlAs type-II tunneling bi-quantum wells

〇中村 雄一¹、松田 侑己¹、藤沼 広輝¹、孫 啓明¹、金子 朔夜¹、中山 航¹、竹内 淳¹ (1.早大理工)

キーワード：spin relaxation、bi-quantum well、tunneling

In this research, we investigated the spin spin relaxation in type-II GaAs/AlGaAs/AlAs tunneling bi-quantum wells by time-resolved spin-dependent pump and probe reflection measurements. As a result, the spin relaxation time in 4.0-nm-thick barriers sample was 87 ps at 50 K, 30 mW. The negative excitation power dependence of the spin relaxation time was observed only in sample with thicker barriers. In my opinion, this research has the important meaning that can contribute to the elucidation of the spin relaxation mechanism.