[12a-D511-1~10] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

▲ [12a-D511-8] Novel InAs SK/SML/SK quantum dot structure and steps toward new broadband IR detectors

〇(D)Hanif Mohammadi¹, Ronel Christian Roca¹, Itaru Kamiya¹ (1.Toyota Tech. Inst.)

Keywords:submonolayer, Quantum dots, Stranski-Krastanov

Infrared (IR) detectors have played a huge role in pushing the boundaries of science in various fields through applications such as night-vision, free-space communication, thermography, remote sensing, etc.^1,2 Quantum dots (QDs) have attracted significant attention as the building block of these devices, i.e. IR detectors. Attempts have been made to couple InAs Stranski-Krastanov (SK) and submonolayer (SML) grown structures for solar cell applications.^3,4 Proposed advantages of coupled SK-SML QDs include better IR efficiency due to reduced strain between the SK and SML QDs. In this study, we aim to investigate the effect of strain interaction between SK and SML QDs to their optical properties. Furthermore, we also prepared structures for broadband IR detection using a triple-layer SK/SML/SK QDs