[12a-D519-1~9] 15.5 Group IV crystals and alloys

[12a-D519-4] Low-Temperature Formation of n-type Ge/Insulator by Bi-Induced Layer Exchange Crystallization

〇SEN LIU¹, XIANGSHENG GONG¹, HONGMIAO GAO¹, TAIZOH SADOH¹ (1.Kyushu Univ.)

Keywords:semiconductor, Germanium, Layer exhchange crystallization

Bi-induced layer exchange crystallization for low-temperature formation of n-type Ge on insulator.For Ge/Bi (100/100nm) stacked structures, layer exchange is achieved at 250-400 degrees.The free electron concentration (about 1019cm-3) of the grown layer is significantly larger than the thermal equilibrium solid solubility.