[12a-PB4-1~13] 13.5 デバイス／配線／集積化技術

▲ [12a-PB4-11] Investigation of water-enhanced degradation in SiO₂/GaN MOS structure

〇(D)LIN TENGDA¹、Mutsunori Uenuma¹、Yasuaki Ishikawa¹、Yukiharu Uraoka¹ (1.NAIST)

キーワード：MOS capacitor, water, degradation

Gallium nitride (GaN) is considered to be the next generation semiconductor toward power device applications. Several efforts have been devoted to GaN based MOSFETs for the last decade. Long-term stability is essential for the practical commercialization of these new power devices. In this study, ambient water moisture induced degradation of SiO₂/GaN MOS capacitor via aging in air was observed and investigated by electrical characterizations. In particular, a space-charge-controlled field emission (SCC-FE) model was applied to study the origin of this degradation.