The 67th JSAP Spring Meeting 2020

Presentation information

Oral presentation

13 Semiconductors » 13.8 Optical properties and light-emitting devices

[12p-A303-1~15] 13.8 Optical properties and light-emitting devices

Thu. Mar 12, 2020 1:45 PM - 5:45 PM A303 (6-303)

Yasushi Nanai(Aoyama Gakuin Univ.), Kenji Shinozaki(AIST)

4:15 PM - 4:30 PM

[12p-A303-10] Luminescence property of high concentration Dy3+ co-doped SrAl2O4:Eu2+, Dy3+

Kenji Toda1, Ryo Tanaka1 (1.Niigata Univ.)

Keywords:Long persistent phosphor, Melt quenching method, Rare earth

In this study, 1 mol% Eu2+ and 0-10 mol% Dy3+ doped SrAl2O4:Eu2+, Dy3+ was synthesized by a melt quenching method using a specially designed arc-imaging furnace. The temperature of the sample reaches 2273 K for tens of seconds and molten samples are rapidly cooled at over -100 K/s. The rare earth concentrations of 1 mol% Eu2+ and 2 mol% Dy3+ are optimal for the solid-state reaction product. (Sr0.89Eu0.01Dy0.10)Al2O4 synthesized by the melt quenching method showed higher afterglow intensity than that synthesized by the solid-state reaction.