[12p-A401-1~6] 17.3 Layered materials

[12p-A401-6] Carrier distribution in bilayer MoS₂ under an external field

〇Mina Maruyama¹, Kosuke Nagashio², Susumu Okada¹ (1.Univ. of Tsukuba, 2.Univ. of Tokyo)

Keywords:transition metal chalcogenide, electronic structure, FET

The electronic structure of bilayer MoS₂ under an external electric field is studied in terms of the interlayer stacking arrangements using the density functional theory combined with the effective screening medium method. The calculations showed that the accumulated carrier distribution strongly depended on the interlayer stacking arrangement, field strength, and carrier concentration. The carriers were highly concentrated on the topmost layer of twisted bilayer MoS₂, while carriers were also found in the second layer of bilayer MoS₂ with the AB interlayer arrangements. In addition to the interlayer arrangements, the field and carrier concentration also affect the carrier distribution in the bilayer MoS₂.