[12p-A403-1~15] 16.3 Bulk, thin-film and other silicon-based solar cells

[12p-A403-15] a-Si/c-Si interface analysis by using large-scale quantum molecular dynamics simulation

〇Hirotaka Katayama¹, Mitsuhiro Matsumoto¹, Tsuyoshi Takahama¹, Akira Terakawa¹ (1.Panasonic Corp.)

Keywords:Silicon, heterojunction solar cell, simulation

The performance of heterojunction Si solar cell was increased rapidly, resent years but the increasing rate is decreasing. To break through the retardation, we are trying to take into account of the knowledge of the of the molecular dynamics simulation technique of CVD process. This time we have calculated the CVD process of Si film on the (100) and (111) oriented Si plane, and we raved the difference of the deposition process of a Si film on these different oriented plans. We estimated that the result is the first time in the world of the CVD process the CVD process using a calculation method.