[12p-A403-1~15] 16.3 Bulk, thin-film and other silicon-based solar cells

[12p-A403-3] Low illuminance characteristics of sextuple-junction amorphous Si solar cells fabricated on flat substrate

〇Makoto Konagai¹, Ryo Sasaki¹, Hiroshi Noge¹, Ryousuke Ishikawa¹ (1.Tokyo City Univ.)

Keywords:amorphous Si solar cell, sextuple-junction solar cell, Low illuminance characteristics

We have developed a bifacial quintuple-junction amorphous Si solar cell as an independent power source for IoT devices. So far, solar cells have been fabricated on SnO₂ / glass with a texture structure, but due to the leakage current caused by the texture structure, the power generation characteristics under low illuminance have deteriorated. Therefore, this time, solar cells were prepared on a flat ITO / glass substrate. Aiming at an operating voltage of 4 V under low illumination, a sextuple-junction bifacial amorphous Si solar cell was made in addition to quintuple- junction. So far, open-circuit voltages of over 4V have been obtained under 3000lux. Furthermore, an open-circuit voltage of about 3.2 V was obtained under 3000 lux with a quintuple-junction solar cell deposited on polyimide film.