[12p-A403-1~15] 16.3 Bulk, thin-film and other silicon-based solar cells

[12p-A403-4] Device Analysis of Rib-Si Solar Cells

〇Makoto Konagai¹, Tsukasa Takamura¹, Ryuto Iwata¹, Yukimi Ichikawa¹, Kimihiko Saito² (1.Tokyo City Univ., 2.Fukushima Univ.)

Keywords:Si solar cell, heterojunction

We are developing a Rib solar cell to reduce the wafer thickness while maintaining the mechanical strength of the wafer. The dependence of Voc on wafer thickness was compared both theoretically and experimentally, and the interface defect density at the p / i interface was estimated. So far, a conversion efficiency of 20.2% has been obtained with a Rib solar cell with a thickness of 100 μm. AFORS-HET was used to analyze the device operation of heterojunction solar cells. The theoretical analysis was performed by inserting a 1 nm layer with a high recombination center at the p / i interface. The relation between the external quantum efficiency of electroluminescence and the injection current was also analyzed theoretically using AFORS-HET.