The 67th JSAP Spring Meeting 2020

Presentation information

Oral presentation

10 Spintronics and Magnetics » 10.4 Semiconductor spintronics, superconductor, multiferroics

[12p-A501-1~16] 10.4 Semiconductor spintronics, superconductor, multiferroics

Thu. Mar 12, 2020 1:15 PM - 5:45 PM A501 (6-501)

Pham Nam Hai(Tokyo Tech), Yota Takamura(Tokyo Tech), Shinji Kuroda(Univ. of Tsukuba)

1:15 PM - 1:30 PM

[12p-A501-1] Fe concentration dependence of the Fe 3d electronic states in p-type ferromagnetic semiconductor (Ga1-x,Fex)Sb

Takahito Takeda1, Kohsei Araki1, Yuita Fujisawa2, Le Duc Anh1,3, Nguyen Thanh Tu1,4, Tukiharu Takeda5, Shin-ichi Fujimori5, Atsushi Fujimori6,7, Masaaki Tanaka1,8, Masaki Kobayashi1,8 (1.EEIS, Univ. of Tokyo, 2.QMSU, OIST, 3.IEI, Univ. of Tokyo, 4.Dep. of Phys., Ho Chi Minh City Univ. of Pedagogy, 5.JAEA, 6.Dep. of Phys., Univ. of Tokyo, 7.Dep. of Appl. Phys., Waseda Univer., 8.CSRN, Univ. of Tokyo)

Keywords:ferromagnetic semiconductor, photoemission spectroscopy

Ferromagnetic semiconductors (FMSs) are alloy semiconductors in which cations are partially replaced by magnetic impurities. FMSs have both the properties of ferromagnets and semiconductors and exhibit carrier-induced ferromagnetism, thereby attracting much attention as promising materials for semiconductor spintronics devices because one can control their magnetic properties by changing the carrier concentration. However, the Curie temperatures (TC) of III-V based FMSs were much lower than room temperature (RT) despite tremendous efforts for the past several decades. Recently, Tu et al., have successfully grown p-type (Ga1-x,Fex)Sb whose TC is higher than RT. Magnetic circular dichroism (MCD), magnetotransport, and magnetization measurements indicate that (Ga1-x,Fex)Sb is an intrinsic ferromagnetic semiconductor. sing angle-resolved photoemission spectroscopy (ARPES), we found that the ferromagnetism in (Ga1-x,Fex)Sb originates from double-exchange interaction. In this study, we have conducted resonant photoemission spectroscopy (RPES) measurements at the Fe L3 absorption edge on (Ga1-x,Fex)Sb thin films with x = 0.05, 0.15, and 0.25 to reveal the Fe concentration dependence of the Fe 3d states.