[12p-A501-1~16] 10.4 半導体スピントロニクス・超伝導・強相関

▼ [12p-A501-13] Investigation of anisotropy of spin relaxation in Si-based lateral spin valve

〇(D)Soobeom Lee¹、Fabien Rortais¹、Ryo Ohshima¹、Yuichiro Ando¹、Minori Goto²、Shinji Miwa²、Yoshishige Suzuki²、Hayato Koike³、Masashi Shiraishi¹ (1.Kyoto Univ.、2.Osaka Univ.、3.TDK Corp.)

キーワード：Silicon, Spin Transistor, Spin Injection

Si has good spin coherence due to its weak spin-orbit interaction and good compatibility with large scale integration technologies. It is essential to understand spin relaxation mechanism in Si for further progress of the Si spin devices. It has been reported that the dominant spin relaxation mechanism in Si was the Elliott-Yafet type spin scattering. Other contributions in spin relaxation, such as spin scattering due to spin-orbit coupling, has not been so far fully investigated in previous studies. This spin scattering has an anisotropy depending on directions of spin component which are the in-plane and out-of-plane of the channel, due to the spin-orbit field. In this study, we investigated anisotropy of the spin lifetime in Si-based lateral spin valve.