[12p-A501-1~16] 10.4 Semiconductor spintronics, superconductor, multiferroics

[12p-A501-14] Spin relaxation in GaAs/Al_0.3Ga_0.7As (110) superlattice

〇Yuzo Ohno¹, Ryogo Okamoto¹, Yuuma Obata¹, Koki Obata¹, PASCUAL DOMINGUEZ JONATHAN JOHAN¹, Satoshi Iba², Hidekazu Saito² (1.Univ. of Tsukuba, 2.AIST)

Keywords:semiconductor superlattice, spin relaxation, spin laser

In semiconductor spin light emitting diodes or lasers, spin polarized electrons are injected into the active layer from ferromagnetic electrodes. In order to keep spin polarization during transport along the growth direction, we propose to use a superlattice (SL) on a (110) substrate. In this work, spin relaxation time of GaAs/Al_0.3Ga_0.7As (110) SL is studied by time- and polarization-resolved photoluminescence spectroscopy. As the tunnel coupling between quantum wells (QWs) is increased, the spin relaxation time at room temperature decreases. But even when the miniband width is as large as 25 meV, spin relaxation time is turned out to be 0.7 ns, about 7 times longer than that of bulk GaAs.