Room-temperature maganetoresistance in <em>p</em>-Ge based vertical spin-valve devices with Co<sub>2</sub>FeSi layer

Atsuya Yamada; Takahiro Shiihara; Michihiro Yamada; Mizuki Honda; Shinya Yamada; Kohei Hamaya

Presentation information

Oral presentation

10 Spintronics and Magnetics » 10.4 Semiconductor spintronics, superconductor, multiferroics

[12p-A501-1~16] 10.4 Semiconductor spintronics, superconductor, multiferroics

Thu. Mar 12, 2020 1:15 PM - 5:45 PM A501 (6-501)

Pham Nam Hai(Tokyo Tech), Yota Takamura(Tokyo Tech), Shinji Kuroda(Univ. of Tsukuba)

3:00 PM - 3:15 PM

▲ [12p-A501-7] Room-temperature maganetoresistance in p-Ge based vertical spin-valve devices with Co₂FeSi layer

〇Atsuya Yamada¹, Takahiro Shiihara¹, Michihiro Yamada^1,2, Mizuki Honda¹, Shinya Yamada^1,2, Kohei Hamaya^1,2 (1.GSES, Osaka Univ., 2.CSRN, Osaka Univ.)

Keywords:spintronics, Germanium, Heusler alloy

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Presentation information

[12p-A501-1~16] 10.4 Semiconductor spintronics, superconductor, multiferroics

▲ [12p-A501-7] Room-temperature maganetoresistance in p-Ge based vertical spin-valve devices with Co2FeSi layer

▲ [12p-A501-7] Room-temperature maganetoresistance in p-Ge based vertical spin-valve devices with Co₂FeSi layer