[12p-B401-1~16] 13.7 Compound and power electron devices and process technology

[12p-B401-1] Anisotropy of GaN appearing by low bias dry etching using Cl₂ gas

〇(B)Yushi Hamaya¹, Moe Okamoto¹, Satoko Shinkai¹ (1.Kyuukou Univ)

Keywords:gallium nitride