2:15 PM - 2:30 PM
[12p-B410-4] Formation of porous Al2O3 films by pulsed laser deposition
Keywords:pulsed laser deposition
In the next-generation ULSI circuits, low dielectric constant of insulating film and low resistance of interconnections are required to improve RC delay time. We believe that nanoporous Al2O3 film with pores or air gap can be used as low-k insulator materials of the interconnections.
We propose a novel method to prepare nanoporous Al2O3 films by pulsed laser deposition. In this method, a sappier target is evaporated by ArF excimer laser irradiation in O2 ambient, and Al2O3 nanoparticles are synthesized by agglomeration of the evaporated Al2O3.
In my presentation, I will talk about electric properties and nanoporous structures of the deposited Al2O3 films.
We propose a novel method to prepare nanoporous Al2O3 films by pulsed laser deposition. In this method, a sappier target is evaporated by ArF excimer laser irradiation in O2 ambient, and Al2O3 nanoparticles are synthesized by agglomeration of the evaporated Al2O3.
In my presentation, I will talk about electric properties and nanoporous structures of the deposited Al2O3 films.