[12p-B410-1~16] 3.7 Laser processing

[12p-B410-4] Formation of porous Al₂O₃ films by pulsed laser deposition

〇(B)Kandai Sakata¹, Toshihumi Kikuchi^1,2, Daisuke Nakamura¹, Hiroshi Ikenoue^1,2 (1.Kyushu Univ., 2.Dept. of Gigaphoton Next GLP, Kyushu Univ.)

Keywords:pulsed laser deposition

In the next-generation ULSI circuits, low dielectric constant of insulating film and low resistance of interconnections are required to improve RC delay time. We believe that nanoporous Al₂O₃ film with pores or air gap can be used as low-k insulator materials of the interconnections.
We propose a novel method to prepare nanoporous Al₂O₃ films by pulsed laser deposition. In this method, a sappier target is evaporated by ArF excimer laser irradiation in O₂ ambient, and Al₂O₃ nanoparticles are synthesized by agglomeration of the evaporated Al₂O_3.
In my presentation, I will talk about electric properties and nanoporous structures of the deposited Al₂O₃ films.