[12p-D215-1~12] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[12p-D215-7] Emission at 1.42 μm from InAs/GaAs Trilayer Quantum Dots

〇Wenbo Zhan¹, Jinkwan Kwoen¹, Katsuyuki Watanabe¹, Masahiro Kakuda¹, Satoshi Iwamoto^1,2,3, Yasuhiko Arakawa¹ (1.NanoQuine, 2.IIS, 3.RCAST, Univ. of Tokyo)

Keywords:trilayer, quantum dots, MBE

InAs/GaAs bilayer quantum dots (QDs) have attracted much attention because of its potential in extending emission wavelength of GaAs-based QDs from well-developed O-band to C-band. InAs/GaAs QD lasers based on bilayer structure have been reported lasing at 1.34 μm without InGaAs strain-reducing layer (SRL). InAs/GaAs bilayer QDs without InGaAs SRL have been reported emitting at 1.4 μm at room temperature (RT). In order to further extend the emission wavelength, we previously proposed a new structure named InAs/GaAs trilayer QDs. In this report, we demonstrated emission at 1.42 μm from InAs/GaAs trilayer QDs without InGaAs SRL which was longer than the longest reported wavelength of the bilayer QDs.