[12p-D311-1~7] 9.3 Nanoelectronics

[12p-D311-7] Si-nanowire-FET sensor detecting high-frequency oscillation of a multilayer-graphene MEMS by means of reflectometry technique

〇Katsuhiko Nishiguchi¹, Akira Fujiwara¹ (1.NTT Basic Res. Labs.)

Keywords:transistor, sensor, MEMS

In this work, using an FET-based sensor composed of multiple Si nanowire channels, we demonstrate detection of mechanical oscillations of a multilayer-graphene MEMS. The multilayer graphene sheet is suspended above the FET’s channels, which is driven by a high-frequency signal via microwave probes connected to double LC matching circuits. Such a reflectometry technique enables detection of graphene’s mechanical oscillations at 240 MHz.