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[12p-D411-13] Nonthermal and selective crystal bridging of ZnO grains by irradiation with electron beam as nonequilibrium reaction field
Keywords:field emission, nonequilibrium reaction field, zinc oxide
Ceramic particles, such as indium tin oxide (ITO) and zinc oxide (ZnO) thin films, are expected to be used as core materials for various electronic applications. In this study, we focused on a nonequilibrium reaction field as a bottom-up architecture for ceramic composition, and we successfully found the basis of a thin-film fabrication technology using a field emission (FE) electron beam with low energy resolution having a half width under 100 meV that uniformly emitted electrons within a plane as a nonequilibrium reaction field. In particular, the ZnO particles obtained in this study exhibited selective crystal bridging along the c-axis upon FE electron beam, and good electrical properties, such as a high Hall mobility of 158.6 cm2/Vs, even though they were formed on a polyethylene terephthalate (PET) film substrate at room temperature. This achievement may contribute to clarifying the mechanism of formation of ZnO particles with a uniform morphology and crystal structure by FE electron beam without thermal treatment during the fabrication. Moreover, this technique will also enable us to provide elements for a broad range of next-generation nanodevices by controlling the surface and interface of nanostructures and to realize highly functional properties using complexes of metals, ceramics, and semiconductors.