[12p-D411-1~14] 6.3 Oxide electronics

△ [12p-D411-3] Current-voltage characteristics and hydrogen impurity effect in Metals/Nb:SrTiO₃ Schottky junctions

〇(B)Taisei Murakami^1,2, Takumi Hosaka^1,2, Takeo Ohsawa², Takeshi Ogaki², Shigenori Ueda², Takamasa Ishigaki¹, Naoki Ohashi² (1.Hosei Univ., 2.NIMS)

Keywords:Resistive switching

Resistive random access memory (ReRAM) is primarily composed of a two-terminal structure using metal electrodes and transition-metal oxides. An external bias sweep to the devices enables resistance switching behaviors: a reversible change between high resistance state (HRS) and low resistance state (LRS). To illuminate more details for the mechanism, we investigate an impact of hydrogen impurity for Metals/Nb:SrTiO₃(001) junctions and find that electronic states in the vicinity of the interfaces play a critical role in the resistive switching.