[12p-D411-1~14] 6.3 Oxide electronics

△ [12p-D411-4] Hydrogen gas sensing properties of SnO₂ thin films loaded with Pt-nanoparticle

〇(M2)Shuhei Nishikawa¹, Makoto Kashiwagi¹, Junjun Jia², Akira Nakamura³, Yuzo Shigesato¹ (1.Aoyama Gakuin Univ., 2.Waseda Univ., 3.MITSUMI ELECTRIC)

Keywords:hydrogen gas sensor, SnO2 thin film, sputtering

SnO₂ has been reported as the functional oxide semiconductor, such as transparent conductive, IR reflecting or gas sensing films. In this study, SnO₂ films were deposited at 300 °C by rf magnetron sputtering using a SnO₂ ceramics target to apply for the hydrogen gas sensing devices. In addition, Pt nanoparticles were fabricated as the catalyst on the SnO₂ film surfaces at RT by dc sputtering with a Pt target. For Pt deposited on the SnO₂ films, a three-dimensional growth (the Volmer-Weber-type) mode is expected because the deposited atoms are bound more strongly to each other than to the substrate surface. The surface coverage of Pt was analyzed by XPS. In-situ hall effect analyses during the gas flow revealed that the changes in the resistivity of the films were mainly caused by the change in the carrier density. The enhancement of the hydrogen gas sensing properties at RT by the catalyst loadings was clearly observed.