The 67th JSAP Spring Meeting 2020

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Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[12p-D419-1~15] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Mar 12, 2020 1:45 PM - 5:45 PM D419 (11-419)

Takayoshi Oshima(FLOSFIA), Masataka Higashiwaki(NICT)

2:00 PM - 2:15 PM

[12p-D419-2] Tailoring the hole mobility in SnO films by modulating the growth thermodynamics and kinetics

〇Makoto Minohara1, Akane Samizo2, Naoto Kikuchi1, Kyoko Bando1, Yoshiyuki Yoshida1, Yoshihiro Aiura1 (1.AIST, 2.Tokyo Univ. of Sci.)

Keywords:Oxide semiconductor