The 67th JSAP Spring Meeting 2020

Presentation information

Print

Oral presentation

Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[12p-D419-1~15] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Mar 12, 2020 1:45 PM - 5:45 PM D419 (11-419)

Takayoshi Oshima(FLOSFIA), Masataka Higashiwaki(NICT)

3:45 PM - 4:00 PM

△ [12p-D419-8] Determination of the energy level of the Fe2+/3+-transition level in BaTiO3 and SrTiO3 by electrical conductance measurement

〇ISSEI SUZUKI1, Takahisa Omata1, Leonard Gura2, Andreas Klein2 (1.Tohoku Univ., 2.Technical Univ. Darmstadt)

Keywords:BaTiO3, transition level, activation energy

Nominally undoped BaTiO3 and SrTiO3 contain significant concentration of Fe as a natural impurity. Transition metal such as Fe generates deep level within the band gap and affects the physical property of the host material. Especially the transition level of Fe2+/3+ have not been studied so far. In this study, the energy level of Fe2+/3+ was determined by stepwise re-oxidation of the strongly redulced BaTiO3 and SrTiO3 and simultaneous measurement of their activation energies.