[12p-D511-1~13] 【CS.6】 Code-sharing Session of 8.3 & 9.2 & 13.6

[12p-D511-9] Fabrication of Si Textures with Low Etching Margin Using AgNO₃-assisted Alkaline Solution

〇(M2)Yuqing Li¹, Hoang Von Nguyen¹, Noritaka Usami¹ (1.Nagoya Univ.)

Keywords:semiconductor, nano-structure, Si pyramid

An alternative method to fabricate crystalline Si (c-Si) textures with low etching margin using AgNO₃-assisted alkaline solution is reported.