[12p-PA1-1~18] 3.9 Terahertz technologies

▲ [12p-PA1-10] Quasi double layer terahertz meta-absorber for bolometric applications

〇(B)Shota Iino¹, Ya Zhang¹, Harumi Asada¹, Takehito Suzuki¹, Zhengli Han², Tianye Niu³, Kazuhiko Hirakawa^3,4 (1.Tokyo Univ. of Agri.&Techno., 2.RIKEN, 3.IIS, Tokyo Univ., 4.NanoQuine, Tokyo Univ.)

Keywords:meta-absorber, terahertz, bolometer

In this work, we propose a quasi- 2.5-dimensional meta-absorber for bolometric applications. We etch the GaAs substrate to form a quasi- double layer structure, and thin metal films (Au/NiCr: 60nm/5 nm) are deposited on both layers. The metal slat layer induces THz resonances and the metal film layer reduces the THz transmission and confine the THz field in the GaAs dielectric. FEM simulations show that the structure has a high absorption coefficient of ~80% at the resonant peak, indicating that the proposed quasi-double layer structure work probably similarly as the conventional double- or multi-layer metamaterials. Furthermore, the proposed structure can reduce the thermal conductance and heat capacity of micro-bolometers since the etching process increases the porosity of the materials, is therefore very promising for realizing high sensitivity THz thermal sensors.