[12p-PA4-1~20] 9.4 熱電変換

▲ [12p-PA4-9] Characterization of Mg₂Sn_1-xGe_x Thin Films for Thermoelectric Applications

〇(D)Mariana Lima^1,2、Takashi Aizawa²、Takao Mori^1,2、Takeaki Sakurai¹ (1.University of Tsukuba、2.National Institute for Materials Science)

キーワード：Magnesium Stannide, Thin Films, MBE

Magnesium-based (Mg₂X, X= Si, Sn and Ge) materials are intermetallic compounds that have been studied for decades as potential high ZT thermoelectric materials. Most of the articles focus on the improvement of thermoelectric property on bulk materials at middle temperatures. However, a few studies have been reported at the room temperature range. In the case of this temperature range, various heat sources such as body heat can be utilized to provide the required electricity, and as the temperature differences are small, and relatively large areas are required, thermoelectric thin films can be a good target. In this work, we utilized molecular beam epitaxy (MBE) to fabricate high quality thermoelectric thin film to achieve high power factor at room temperature.