[12p-PA5-1~34] 12.4 Organic light-emitting devices and organic transistors

[12p-PA5-13] Simultaneous measurement of noise and bias stress of organic transistor

〇(B)Satomi Hasegawa¹, Tomohide Ueno¹, Takashi Fukuda², Shizuo Tokito¹, Hiroyuki Matsui¹ (1.ROEL, Yamagata Univ., 2.Tosoh Corporation)

Keywords:noise, bias stress, trap

Although bias stress and noise are the issues related to the operational stability of organic transistors, their unified understanding is still insufficient. The purpose of this research is to study the causes of these two phenomena and improve the operation performance of the organic transistors. For that purpose, here we measure simultaneously bias stress and noise for four types of devices having different insulating layers and channel layers, and investigate their correlation.