The 67th JSAP Spring Meeting 2020

Presentation information

Oral presentation

13 Semiconductors » 13.9 Compound solar cells

[13a-A202-1~12] 13.9 Compound solar cells

Fri. Mar 13, 2020 9:00 AM - 12:00 PM A202 (6-202)

Hisashi Miyazaki(National Defense Academy)

11:15 AM - 11:30 AM

[13a-A202-10] The surface morphology change analysis of Ag2Te layers in the two-step closed space sublimation process of AgGaTe2

〇(M2)Yang Yu1, Masakazu Kobayashi1,2 (1.Waseda Univ. ASE., 2.Waseda Univ. ZAIKEN.)

Keywords:Solar cell, Ag2Te

AgGaTe2 is a promising photovoltaic material available for using in high-efficiency solar cells. The growth process of AgGaTe2 utilizes Ag2Te buffer layer, which has attributed a high quality AgGaTe2 thin film. The surface morphology change analysis of Ag2Te layers in the two-step closed space sublimation process of AgGaTe2.The annealing temperature was varied from 400 °C to 600 °C with annealing time of 15 min to 75min for Ag2Te buffer layer. The surface morphological characterization of was performed using an optical microscope. The crystallographic properties were evaluated by a standard θ–2θ measurements using XRD. The Ag2Te layer exhibited small holes randomly distributed on the surface at 400 °C to 500 °C. The Ag2Te layer surface exhibited a rugged and hollow film structure after annealing at 600 °C.