[13a-A302-1~11] 15.4 III-V-group nitride crystals

△ [13a-A302-6] Development of Transverse Quasi-Phase-Matched GaN Waveguide-Type Wavelength Conversion Device

〇Tenta Komatsu¹, Toshiki Hikosaka², Shinya Nunoue², Masahiro Uemukai¹, Tanikawa Tomoyuki¹, Katayama Ryuji¹ (1.Osaka Univ., 2.Toshiba Corp.)

Keywords:Optical Waveguide, Wavelength Conversion Device, Nitride Semiconductor

Since GaN has high optical damage tolerance and electro-optic effect, it is possible to fabricate an optical parametric amplifier and an electric-field-applied Mach-Zehnder interferometer necessary for implementing continuous variable quantum calculation on the same substrate. Assuming that squeezed light in the 800 nm band generated by degenerate parametric down-conversion will be used in the future, in this study, we developed a GaN waveguide-type wavelength conversion device to demonstrate the second harmonic generation in the 400 nm band.