[13a-A305-1~9] 13.5 デバイス／配線／集積化技術

▲ [13a-A305-9] Performance and limitations of Si electron nano-aspirator

〇Manjakavahoaka Razanoelina¹、Himma Firdaus¹、Yukinori Ono¹ (1.Shizuoka Univ.)

キーワード：electron-electron scattering, electron hydrodynamic, SOI MOSFET

Electron nano aspirator is a T-shaped branch SOI MOS-transistor that enhances the output current without additional energy. In fact, the Si electron aspirator offers an alternative to overcome the fundamental limit of MOSFET drivability by the mean of e-e scattering. Here, we investigate on the performance and limitations of the device related to different non-conserving momentum scatterings phenomena.