[13a-A403-1~9] 16.3 シリコン系太陽電池

[13a-A403-3] 多結晶シリコンインゴット中の転位発生点近傍の構造特性

〇大野 裕¹、田島 和哉²、沓掛 健太朗³、宇佐美 徳隆² (1.東北大金研、2.名大工、3.理研)

キーワード：シリコン太陽電池、転位クラスター

Many dislocation clusters acting as recombination centers are frequently generated during the growth of multicrystalline silicon (mc-Si), and they degrade the electric properties around them, which is much inferior to that in monocrystalline Si solar cells. One important issue to fabricate high quality mc-Si solar cells is, therefore, to control the generation of dislocation clusters during the crystal growth. It is proposed that some triple junctions of GBs are related to the dislocation generation. We have therefore examined the triple junctions to discuss the mechanism of the generation of dislocation clusters in terms of the nanoscopic structural properties of dislocations and grain boundaries. They would be generated accompanied with the movement of the triple junctions. They propagate towards different directions, forming dislocation clusters involving small angle tilt boundaries and dislocation networks. The mechanism of their generation and propagation will be discussed.