[13a-A403-1~9] 16.3 Bulk, thin-film and other silicon-based solar cells

△ [13a-A403-7] Analysis of RPD-induced defects by annealing dependence of carrier lifetime

〇Tomohiko Hara¹, Riku Wakita¹, Takefumi Kamioka^1,2, Yoshio Ohshita¹ (1.Toyota Technol Inst, 2.Meiji Univ)

Keywords:DLTS, ITO, Hetero junction solar cell

It is known that the effective minority carrier lifetime of Si decreases when a transparent electrode material is formed by Reactive Plasma deposition (RPD), and is recovered by heat treatment at about 200 ° C. Deep Level Transient Spectroscopy (DLTS) measurements were performed to clarify the cause and reported that at least four types of defects were introduced by the RPD process. By comparing, the correlation between carrier lifetime and each defect was studied.