2020年第67回応用物理学会春季学術講演会

講演情報

一般セッション(口頭講演)

17 ナノカーボン » 17.1 カーボンナノチューブ,他のナノカーボン材料

[13a-A404-1~9] 17.1 カーボンナノチューブ,他のナノカーボン材料

2020年3月13日(金) 09:30 〜 11:45 A404 (6-404)

小林 慶裕(阪大)

11:30 〜 11:45

[13a-A404-9] High temperature growth of highly crystalline carbon nanotube from carbon nano-onion seed using ethylene as carbon feedstock

〇(D)Mengyue Wang1、Keisuke Nippon Kayaku1、Michiharu Arifuku2、Noriko Kiyoyanagi2、Yoshihiro Kobayashi1 (1.Osaka Univ.、2.Nippon Kayaku)

キーワード:high temperature growth, crystalline carbon nanotube, etchant

High-temperature process in chemical vapor deposition (CVD) is a promising approach to form high quality carbon nanotube (CNT) with fewer defects, and it provides us a new way to improve CNTs’ properties in various applications [1,2]. In our previous study [3], we have got high quality CNTs (top/average I(G)/I(D)~300/52) by CVD at 1000℃ with choosing acetylene (C2H2) as carbon source and carbon nano-onion (CNO) as growth seed through two-stage growth. C2H2 is a suitable material for the growth at usual CVD temperature. However, pyrolysis temperature for C2H2is relatively low, and several complex reaction path ways should be involved above their pyrolysis temperature [4], resulting in difficult control due to violent behavior at high temperature, such as serious deposition of amorphous carbon (a-C). In this work, we explore to use ethylene (C2H4) as alternative carbon feedstock for high temperature growth of CNT instead of C2H2, since its pyrosis temperature is higher than C2H2 and well-behaved growth manner will be expected.