[13a-A405-1~11] 12.2 Characterization and Materials Physics

△ [13a-A405-8] Electrical Conductivity of Metal-Encapsulating Si₁₆ Cage Nanocluster Thin Films

〇Takaho Yokoyama¹, Tatsuya Chiba¹, Naoyuki Hirata¹, Hironori Tsunoyama¹, Masahiro Shibuta^1,2, Atsushi Nakajima¹ (1.Keio Univ., 2.Philipps Univ.)

Keywords:silicon, thin film, nanocluster

Metal-encapsulating silicon cage nanoclusters (M@Si₁₆) are expected as building blocks for photovoltaics and electronic devices, because their electronic properties can be tuned by changing the central metal atom while maintaining the unique geometric cage structure. In this study, M@Si₁₆ were precisely synthesized in gas phase and deposited on substrates as thin films. Temperature dependent current-voltage (I-V) characteristics revealed the electrical properties of the cluster-assembled thin films including the electrical conduction mechanism.