2020年第67回応用物理学会春季学術講演会

講演情報

一般セッション(口頭講演)

10 スピントロニクス・マグネティクス » 10.3 スピンデバイス・磁気メモリ・ストレージ技術

[13a-A501-1~8] 10.3 スピンデバイス・磁気メモリ・ストレージ技術

2020年3月13日(金) 10:00 〜 12:00 A501 (6-501)

山本 竜也(産総研)

10:00 〜 10:15

[13a-A501-1] Theoretical prediction of giant tunnel magnetoresistance in (111)-oriented magnetic tunnel junctions

Keisuke Masuda1、Hiroyoshi Itoh2、Yoshio Miura1 (1.NIMS、2.Kansai Univ.)

キーワード:tunnel magnetoresistance effect, magnetic tunnel junction, first-principles calculation

We propose unprecedentedly high tunnel magnetoresistance (TMR) based on a new mechanism in unconventional (111)-oriented magnetic tunnel junctions (MTJs). Using the first-principles-based transport calculation, we found that the Co/MgO/Co(111) MTJ has a quite high TMR ratio driven by the interfacial resonance effect. These our findings not only advance the fundamental understanding on TMR but also give a new insight to experimentally explore wider range of MTJs for higher TMR ratios.