[13a-A501-1~8] 10.3 Spin devices, magnetic memories and storages

▼ [13a-A501-3] Spin-dependent current modulation in perovskite-oxide-based three-terminal magnetic tunnel junctions for the realization of vertical spin transistors

〇Youhei Asahara¹, Le Duc Anh^1,2, Masaaki tanaka^1,3, Shinobu Ohya^1,2,3 (1.EEIS, Univ. of Tokyo, 2.IEI, Univ. of Tokyo, 3.CSRN, Univ. of Tokyo)

Keywords:spin transistor, perovskite oxides