Theoretical analysis and investigation of device structure dependency of MgSe/ZnCdSe resonant tunneling diode characteristics

Presentation information

Oral presentation

15 Crystal Engineering » 15.2 II-VI and related compounds

Fri. Mar 13, 2020 9:00 AM - 10:45 AM D215 (11-215)

Tamotsu Okamoto(Natl. Inst. of Tech., Kisarazu Col.)

9:00 AM - 9:15 AM

〇Yanyingjiao Zhang¹, Keiji Maeda¹, Ichirou Nomura¹ (1.Sophia Unv.)

Keywords:II-VI semiconductor, resonant tunneling diode