Growth of ZnS layer by UHV sputter epitaxy method and its characterization

Ai Mizuno; Yuta Dio; Hiroyuki Shinoda; Nobuki Mutsukura

Presentation information

Oral presentation

15 Crystal Engineering » 15.2 II-VI and related compounds

[13a-D215-1~7] 15.2 II-VI and related compounds

Fri. Mar 13, 2020 9:00 AM - 10:45 AM D215 (11-215)

Tamotsu Okamoto(Natl. Inst. of Tech., Kisarazu Col.)

10:30 AM - 10:45 AM

[13a-D215-7] Growth of ZnS layer by UHV sputter epitaxy method and its characterization

〇Ai Mizuno¹, Yuta Dio¹, Hiroyuki Shinoda¹, Nobuki Mutsukura¹ (1.School of Engineering, Tokyo Denki Univ.)

Keywords:ZnS layer, CL, Si substrate

Our group has demonstrated the crystallinity and surface morphology of the ZnS layers grown on Al₂O₃ substrates. In this work, we investigated a non-doped ZnS single crystal layers on Si substrates with low cost and low lattice mismatch with ZnS, and examined its characteristics.