[13a-D419-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[13a-D419-12] Semiconductor Properties of β-Ga₂O₃ Crystals Grown by the VB Technique in Ambient Air

〇(M1)Mamoru Takabe¹, Tsuyoshi Kobayashi¹, Toshinori Taishi¹, Keigo Hoshikawa^1,2, Etsuko Ohba², Takumi Kobayashi² (1.Shinshu Univ., 2.Fujikoshi Machinery.Co.)

Keywords:beta-Ga2O3, electric properties, carrier concentration

Electric properties of VB-grown 2 inch β-Ga₂O₃ crystals were measured and compared with impurity concentration in crystals. It was found that activity of dopants decreased with increasing dopant concentrations in crystals.