[13a-D419-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[13a-D419-9] Epitaxial growth of NiO on MgO (001) substrate by sol-gel dip method

〇Takashi Yasuda¹, Kenji Shirashima¹, Tomoyuki Iki¹ (1.ISU)

Keywords:oxide semiconductor, NiO, sol-gel

We report crystallinity of NiO on MgO(001) substrate synthesized by sol-gel dip method.