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6 Thin Films and Surfaces » 6.3 Oxide electronics

[13a-PA3-1~35] 6.3 Oxide electronics

Fri. Mar 13, 2020 9:30 AM - 11:30 AM PA3 (PA)

9:30 AM - 11:30 AM

[13a-PA3-14] Electrical characterization of ReRAM using ZrO_x/SiO_x bilayer resistive switching layer

〇(B)Keito Touyama¹, Shinya Aikawa¹ (1.Kougakuin Univ.)

Keywords:ReRAM