The 67th JSAP Spring Meeting 2020

Presentation information

Poster presentation

13 Semiconductors » 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[13a-PA5-1~9] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

Fri. Mar 13, 2020 9:30 AM - 11:30 AM PA5 (PA)

9:30 AM - 11:30 AM

[13a-PA5-3] Relationship between active layer structures and optical properties of GaInN/GaN selective area grown nanocolumn crystals

Keigo Yosida1, Keiji Takimoto2, Rie Togashi2, Ichiro Nomura2, Tomohiro Yamaguchi1, Takeyoshi Onuma1, Tohru Honda1, Katsumi Kishino2 (1.Kogakuin univ., 2.Sophia Univ.)

Keywords:semiconductor, nanostructure, optical properties (InGaN, InN)

The luminous efficacy of GaInN decreases due to an increase in misfit dislocations as the emission wavelength increases.Nanocolumn crystals exhibit dislocation filtering effects and strain relaxation, which can reduce the problems of GaInN/GaN-based materials. In addition, selective area grown nanocolumn crystals can precisely control the nanocolumn diameter and the the nanocolumn period. In this study, GaInN/GaN nanocolumn crystals with different periods and column diameters were grown on the same substrate, and investigated the column structure dependence of optical properties