[13a-PA5-1~9] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[13a-PA5-3] Relationship between active layer structures and optical properties of GaInN/GaN selective area grown nanocolumn crystals

〇Keigo Yosida¹, Keiji Takimoto², Rie Togashi², Ichiro Nomura², Tomohiro Yamaguchi¹, Takeyoshi Onuma¹, Tohru Honda¹, Katsumi Kishino² (1.Kogakuin univ., 2.Sophia Univ.)

Keywords:semiconductor, nanostructure, optical properties (InGaN, InN)

The luminous efficacy of GaInN decreases due to an increase in misfit dislocations as the emission wavelength increases.Nanocolumn crystals exhibit dislocation filtering effects and strain relaxation, which can reduce the problems of GaInN/GaN-based materials. In addition, selective area grown nanocolumn crystals can precisely control the nanocolumn diameter and the the nanocolumn period. In this study, GaInN/GaN nanocolumn crystals with different periods and column diameters were grown on the same substrate, and investigated the column structure dependence of optical properties