09:30 〜 11:30
▲ [13a-PA5-5] A Study on Submonolayer InAs Quantum Well Islands for Upconversion Applications
キーワード：Quantum Well Islands, InAs, submonolayer
Disk-like InAs Quantum well islands (QWIs), grown by Stranski-Krastanov (SK) mode, have been shown to exhibit efficient photon upconversion and is good candidate for intermediate-band solar cell (IBSC) applications. However, we have realized that submonolayer (SML) growth of QWIs may lead to several unique advantages compared to SK, including the ability to control the size and shape of SML-QWIs by changing the layer thicknesses of the InAs and GaAs layers as well as the number of stacks. In this report, tunability of the optical properties of various SML-QWI structures is investigated by photoluminescence (PL). It is demonstrated that the PL peak of the SML-QWIs can be tuned between 850 to 1000 nm by only varying the InAs thickness. Further investigation of the upconversion properties of the SML-QWIs will be carried out.