[13a-PA6-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[13a-PA6-1] Nitrogen and boron co-doped 4H-SiC growth with using boron doped SiC powders

〇Kazuma Eto¹, Miku Takano², Shoji Suzuki², Kouki Ichitsubo², Tomohisa Kato¹ (1.AIST, 2.Taiheiyo Cement)

Keywords:Crystal growth, sublimation growth, SiC

The quality of a low-resistivity 4H-SiC substrate is degraded by the generation of staking faults which comes from heavy nitrogen doping. Recently our group has reported the growth of low resistivity 4H-SiC bulk crystals under nitrogen and boron co-doping conditions. The generation of SFs was suppressed by the co-doping for low resistivity n-type 4H-SiC in sublimation growth. However, by using row boron powders as a part of source materials, the threading dislocations have been increased drastically within the initial growth layer. To avoid such a problem, we tried to use pre-boron-doped SiC powders as a source material of sublimation growth of 4H-SiC.